Aluminum Nitride Ceramic
Aluminum Nitride (AlN) Ceramics
Aluminum nitride (AlN) is a new type of ceramic material with excellent comprehensive properties. It has excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic, and a coefficient of thermal expansion compatible with silicon. The series of excellent characteristics are considered to be the ideal materials for highly concentrated semiconductor substrates and electronic device packaging.
The thermal conductivity of aluminum nitride is 5 to 10 times that of the traditional substrate material aluminum oxide, which is close to the thermal conductivity of beryllium oxide. The thermal conductivity of Al2O3 substrates is low, and the thermal expansion coefficient is not very compatible with Si. Although BeO has Excellent comprehensive performance, its higher production cost and highly toxic shortcomings limit its application and promotion. Compared with several other ceramic materials, aluminum nitride ceramics have excellent comprehensive properties and are very suitable for semiconductor substrates and structural packaging. The potential of materials in the electronics industry is huge.
Edgetech Industries, advanced ceramics division is a leading supplier of ceramic materials. We supply aluminum nitride ceramics products with excellent specifications and competitive prices.
Aluminum Nitride Ceramic Properties
-Very high thermal conductivity (> 170 W/mK)
-High electrical insulation capacity (>1.1012Ωcm), withstand voltage strength
-Low dielectric constant and low dielectric loss
-Low thermal expansion 4 to 6×10-6K-1(between 20 and 1000°C)
-Good metallization capacity
-Expansion coefficient can be matched with semiconductor silicon wafer
-Better mechanical strength than alumina.
-Good corrosion resistance to molten metal
-Minimum impurity content, non-toxic, high purity
-Suitable for the casting process
Processing methods of Aluminum Nitride Ceramic
Aluminum Nitride Ceramic Applications
AlN ceramic products are mainly used in high-density hybrid circuits, microwave power devices, semiconductor power devices, power electronic devices, optoelectronic components, semiconductor refrigeration, and other products as high-performance substrate materials and packaging materials.
-Heat sink substrate, LED package substrate, a semiconductor substrate, thin-film circuit substrate, power resistor substrate
-Dielectric layers in optical storage media
-Electronic substrates, chip carriers where high thermal conductivity is essential；
-Crucibles for compound semiconductor single crystal growth
-Substrate for high-frequency surface acoustic wave device
The target of ytterbium-high purity aluminum nitride film
-Infrared and microwave window materials