Silicon Carbide Trays

Edgetech Industries, Advanced Ceramics Division supplies high-quality and competitive price advanced Silicon Carbide (SiC) Trays.

SKU: SiC-T

Silicon Carbide Trays, SiC Ceramic Tray

The Silicon Carbide Trays uses high-purity pressureless sintered silicon carbide ceramic as its raw material, which has the advantages of high hardness, wear resistance, high thermal conductivity, stable mechanical properties at high temperatures, corrosion resistance, etc. The product has high precision and good uniformity of wafer epitaxial layer etching.

The wafer carriers used in the epitaxial growth process are subjected to high temperature and chemical cleaning. Edgetech provides high-purity silicon carbide ceramic carriers that can withstand high temperatures, produce uniform heat distribution, consistent epitaxial layer thickness and resistance, and excellent chemical corrosion resistance.

Silicon Carbide Properties

Item	Unit	SiC
Physical Property
Color	\	Black
Density	g/cm3	3.1
Mechanical properties
Bending strength(20℃)	Mpa	400
Compressive strength (20℃)	Mpa	2200
Elastic modulus (20℃)	Gpa	400
Fracture toughness (20℃)	MPam½	4
Vickers hardness (HV1)	Gpa	21
Rockwell hardness(45N)	R45N	88
Thermal properties
Coefficient of thermal expansion (20℃-1000℃）	10^-6K^-1	4
Thermal conductivity	W/mk	100-120
Thermal shock stability	△T.℃	400
Specific heat capacity	J/g·k	0.67
Maximum operating temperature（in air）	℃	1600
Electrical properties
Volume resistance (20℃)	Ωcm	10^5

Applications Areas

It is mainly used in the ICP etching process of epitaxial layer thin film materials (GaN, SiO2, etc.) of LED wafer chips, precision ceramic parts for semiconductor diffusion, and the MOCVD epitaxial process of semiconductor wafers.

Packing

Our Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.