Metallized AlN Ceramics, Metallized Aluminum Nitride Ceramic
Edgetech Industries, Advanced Ceramics Division supplies high-quality Metallized AlN Ceramics at competitive prices.
An important issue in developing high-reliability, fast, high-power devices using modern technology is heat dissipation, as heat reduces reliability and shortens the life of electronic devices. Thermally conductive materials can help solve this problem. Possible thermally conductive materials include beryllium oxide, silicon carbide, aluminum nitride, and silicon nitride. However, beryllium oxide is toxic, silicon carbide is a semiconductor with poor dielectric properties, and silicon nitride is difficult to process. Only Aluminum nitride has the best properties and can be manufactured simply and effectively. Metalized aluminum nitride ceramics are the most ideal heat dissipation and packaging materials among semiconductor electronic materials. Due to its high thermal conductivity, high insulation resistivity, excellent mechanical strength, and thermal shock resistance, it has also become one of the important precision ceramic materials.
The main metallization of aluminum nitride ceramics includes thick film metallization, thin film metallization, electroless plating metallization, and laser metallization.
Aluminum Nitride Ceramic Parameter
| Item | Unit | AlN |
| Physical Property | ||
| Color | \ | Grayish white, Beige |
| Volume Density | g/cm3 | 3.3 |
| Surface roughness | um | 0.2-0.85 |
| Warpage | (length ‰) | ≤3 |
| Thermal properties | ||
| Thermal conductivity | W/m.k | 170-230 |
| Thermal expansivity | x 10-6/°C (20℃-800℃) | 4-6 |
| Mechanical properties | ||
| Flexural strength | MPa | ≥300 |
| Electrical properties | ||
| Dielectric constant | 1MHZ, 25℃ | 8-9 |
| Dielectric strength | KV/mm | ≥15 |
| Volume resistivity | Ω.cm | ≥1014 |
Typical characteristic
AlN ceramic metallization has many advantages. It is also an ideal electronic packaging material and can be used as a substrate to make printed circuit boards for use in high-frequency circuits. In addition, aluminum nitride ceramic metallization has superior heat transfer properties and is suitable for high-power circuits.
-High thermal conductivity
-The thermal expansion coefficient can match that of semiconductor silicon wafers
-Has high insulation resistance and dielectric strength
-Has low dielectric constant and dielectric loss
-High mechanical properties and good machining performance
-Has a very low secondary electron emission coefficient
-Non-toxic
Application of Aluminum Nitride Ceramics
-Ideal with heat dissipation and packaging materials for large-scale integrated circuits, semiconductor module circuits, and high-power devices
Packing
Our Metallized AlN Ceramic is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.
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